MOSFET N-CH 800V 3A IPAK STD4NK80Z-1
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Description:
MOSFET N-CH 800V 3A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD4NK80Z-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99099,Price reference "real-time change" China/Hongkong。 STD4NK80Z-1 package/specs, Download STD4NK80Z-1、Datasheet。