MOSFET N-CH 650V 10A I2PAKFP STFI10N65K3
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Description:
MOSFET N-CH 650V 10A I2PAKFP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STFI10N65K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8135,Price reference "real-time change" China/Hongkong。 STFI10N65K3 package/specs, Download STFI10N65K3、Datasheet。