MOSFET N-CH 650V 28A I2PAKFP STI34N65M5
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Description:
MOSFET N-CH 650V 28A I2PAKFP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI34N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78082,Price reference "real-time change" China/Hongkong。 STI34N65M5 package/specs, Download STI34N65M5、Datasheet。