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MOSFET N-CH 650V 27A TO220FP STF35N65M5

STF35N65M5 image
The pictures are for reference only
Brand:
Model:
STF35N65M5
Description:
MOSFET N-CH 650V 27A TO220FP
Stock:
45006
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
Price:$1.9
The market price fluctuates. Please consult the customer service for the actual price
Contact UsContact Us
座机icoTel :0755-82988826
手机icoPhone:13794459602(Wechat)
QQicoQ  Q:3469113929
QQicoEmail:3469113929@qq.com
产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    27A(Tc)
  • Drain source voltage (Vdss)
    650 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    83 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    3750 pF @ 100 V
  • On resistance (maximum) for different Ids and Vgs
    98 mΩ @ 13.5A,10V
  • Power dissipation (maximum)
    40W(Tc)
  • Vgs (max)
    ±25V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    pipe
  • series
    MDmesh™ V
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    TO-220FP
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
  • PDFicoDataSheet
    STF35N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory45006,Price reference "real-time change" China/Hongkong。 STF35N65M5 package/specs, Download STF35N65M5、Datasheet。
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