MOSFET N-CH 650V 12A TO220 STP18N65M2
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Description:
MOSFET N-CH 650V 12A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP18N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77460,Price reference "real-time change" China/Hongkong。 STP18N65M2 package/specs, Download STP18N65M2、Datasheet。