MOSFET N-CH 900V 6A I2PAK STI6N90K5
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Description:
MOSFET N-CH 900V 6A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI6N90K5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68391,Price reference "real-time change" China/Hongkong。 STI6N90K5 package/specs, Download STI6N90K5、Datasheet。