MOSFET N-CH 40V 80A DPAK STD180N4F6
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Description:
MOSFET N-CH 40V 80A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD180N4F6（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35228,Price reference "real-time change" China/Hongkong。 STD180N4F6 package/specs, Download STD180N4F6、Datasheet。
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