MOSFET N-CH 40V 80A DPAK STD120N4LF6
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Description:
MOSFET N-CH 40V 80A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
DataSheet
STD120N4LF6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87475,Price reference "real-time change" China/Hongkong。 STD120N4LF6 package/specs, Download STD120N4LF6、Datasheet。