MOSFET N-CH 600V 29A D2PAK STB34NM60N
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Description:
MOSFET N-CH 600V 29A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB34NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91040,Price reference "real-time change" China/Hongkong。 STB34NM60N package/specs, Download STB34NM60N、Datasheet。