SCTH70N120G2V-7 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

SCTH70N120G2V-7

Description:

SILICON CARBIDE POWER MOSFET 120

Stock:

94563

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$8.63

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Parameters

Current at 25 ° C - continuous drain (Id)

90A(Tc)

Drain source voltage (Vdss)

1200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

18V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

150 nC @ 18 V

Input capacitance at different Vds (Ciss) (maximum)

3540 pF @ 800 V

On resistance (maximum) for different Ids and Vgs

30 mΩ @ 50A,18V

Power dissipation (maximum)

469W(Tc)

Vgs (max)

+22V,-10V

Vgs (th) (maximum) for different Ids

4.9V @ 1mA

packing

TR,CT

series

technology

SiCFET(silicon carbide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

H2PAK-7

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载SCTH70N120G2V-7.pdf

SCTH70N120G2V-7（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94563,Price reference "real-time change" China/Hongkong。 SCTH70N120G2V-7 package/specs, Download SCTH70N120G2V-7、Datasheet。