MOSFET N-CH 600V 400MA SOT223 STN1HNK60
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Description:
MOSFET N-CH 600V 400MA SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STN1HNK60(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3913,Price reference "real-time change" China/Hongkong。 STN1HNK60 package/specs, Download STN1HNK60、Datasheet。