MOSFET N-CH 200V 9A TO220AB IRF630
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Description:
MOSFET N-CH 200V 9A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF630(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67162,Price reference "real-time change" China/Hongkong。 IRF630 package/specs, Download IRF630、Datasheet。