MOSFET N-CH 100V 110A D2PAK STB120NF10T4
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Description:
MOSFET N-CH 100V 110A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB120NF10T4(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17665,Price reference "real-time change" China/Hongkong。 STB120NF10T4 package/specs, Download STB120NF10T4、Datasheet。