MOSFET N-CH 500V 35A D2PAK STB45N50DM2AG
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Description:
MOSFET N-CH 500V 35A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, MDmesh™ DM2
DataSheet
STB45N50DM2AG(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35674,Price reference "real-time change" China/Hongkong。 STB45N50DM2AG package/specs, Download STB45N50DM2AG、Datasheet。