SICFET N-CH 650V 100A HIP247 SCTW100N65G2AG
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Description:
SICFET N-CH 650V 100A HIP247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SCTW100N65G2AG(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36566,Price reference "real-time change" China/Hongkong。 SCTW100N65G2AG package/specs, Download SCTW100N65G2AG、Datasheet。