MOSFET P-CH 60V SOT223 STN3P6F6
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Description:
MOSFET P-CH 60V SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STN3P6F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66684,Price reference "real-time change" China/Hongkong。 STN3P6F6 package/specs, Download STN3P6F6、Datasheet。