MOSFET N-CH 620V 2.7A DPAK STD3N62K3
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Description:
MOSFET N-CH 620V 2.7A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD3N62K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93991,Price reference "real-time change" China/Hongkong。 STD3N62K3 package/specs, Download STD3N62K3、Datasheet。