MOSFET P CH 60V 10A DPAK STD10P6F6
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Description:
MOSFET P CH 60V 10A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD10P6F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50417,Price reference "real-time change" China/Hongkong。 STD10P6F6 package/specs, Download STD10P6F6、Datasheet。