MOSFET N-CH 650V 8A DPAK STD12N65M2
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Description:
MOSFET N-CH 650V 8A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD12N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83851,Price reference "real-time change" China/Hongkong。 STD12N65M2 package/specs, Download STD12N65M2、Datasheet。