MOSFET N-CH 1000V 2.2A DPAK STD4NK100Z
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Description:
MOSFET N-CH 1000V 2.2A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, SuperMESH™
DataSheet
STD4NK100Z(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7267,Price reference "real-time change" China/Hongkong。 STD4NK100Z package/specs, Download STD4NK100Z、Datasheet。