MOSFET N-CH 600V 21A D2PAK STB28N60DM2
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Description:
MOSFET N-CH 600V 21A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB28N60DM2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32095,Price reference "real-time change" China/Hongkong。 STB28N60DM2 package/specs, Download STB28N60DM2、Datasheet。