MOSFET N-CH 800V 9A TO247-3 STW10NK80Z
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Description:
MOSFET N-CH 800V 9A TO247-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STW10NK80Z(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20668,Price reference "real-time change" China/Hongkong。 STW10NK80Z package/specs, Download STW10NK80Z、Datasheet。