MOSFET N-CH 20V SOT23-6 STT5N2VH5
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Description:
MOSFET N-CH 20V SOT23-6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
STT5N2VH5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7252,Price reference "real-time change" China/Hongkong。 STT5N2VH5 package/specs, Download STT5N2VH5、Datasheet。