MOSFET N-CH 600V 400MA TO92-3 STQ1HNK60R-AP
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Description:
MOSFET N-CH 600V 400MA TO92-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STQ1HNK60R-AP(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39033,Price reference "real-time change" China/Hongkong。 STQ1HNK60R-AP package/specs, Download STQ1HNK60R-AP、Datasheet。