MOSFET N-CH 600V 7.5A DPAK STD10N60M2
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Description:
MOSFET N-CH 600V 7.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD10N60M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1312,Price reference "real-time change" China/Hongkong。 STD10N60M2 package/specs, Download STD10N60M2、Datasheet。