MOSFET N-CH 55V 80A DPAK STD65N55F3
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Description:
MOSFET N-CH 55V 80A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD65N55F3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89312,Price reference "real-time change" China/Hongkong。 STD65N55F3 package/specs, Download STD65N55F3、Datasheet。