MOSFET N-CH 800V 16A D2PAK STB23N80K5
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Description:
MOSFET N-CH 800V 16A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB23N80K5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32804,Price reference "real-time change" China/Hongkong。 STB23N80K5 package/specs, Download STB23N80K5、Datasheet。