STP80NF55-08AG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STP80NF55-08AG

Description:

MOSFET N-CHANNEL 55V 80A TO220

Stock:

1369

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.55

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Parameters

Current at 25 ° C - continuous drain (Id)

80A(Tc)

Drain source voltage (Vdss)

55 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

112 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3740 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

8 mΩ @ 40A,10V

Power dissipation (maximum)

300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

Automotive, AEC-Q101, STripFET™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

TO-220

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Final sale

DataSheet

下载STP80NF55-08AG.pdf

STP80NF55-08AG（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1369,Price reference "real-time change" China/Hongkong。 STP80NF55-08AG package/specs, Download STP80NF55-08AG、Datasheet。