MOSFET N-CH 600V 34A D2PAK STB42N60M2-EP
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Description:
MOSFET N-CH 600V 34A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB42N60M2-EP(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70398,Price reference "real-time change" China/Hongkong。 STB42N60M2-EP package/specs, Download STB42N60M2-EP、Datasheet。