MOSFET N-CH 600V 30A D2PAK STB36N60M6
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Description:
MOSFET N-CH 600V 30A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB36N60M6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14865,Price reference "real-time change" China/Hongkong。 STB36N60M6 package/specs, Download STB36N60M6、Datasheet。