MOSFET N-CH 800V 11A TO247-3 STW11NM80
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Description:
MOSFET N-CH 800V 11A TO247-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STW11NM80(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65690,Price reference "real-time change" China/Hongkong。 STW11NM80 package/specs, Download STW11NM80、Datasheet。