MOSFET N-CH 600V 2.4A IPAK STD3NK60Z-1
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Description:
MOSFET N-CH 600V 2.4A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
STD3NK60Z-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory69593,Price reference "real-time change" China/Hongkong。 STD3NK60Z-1 package/specs, Download STD3NK60Z-1、Datasheet。