MOSFET N-CH 600V 22A I2PAK STI28N60M2
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Description:
MOSFET N-CH 600V 22A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI28N60M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory45380,Price reference "real-time change" China/Hongkong。 STI28N60M2 package/specs, Download STI28N60M2、Datasheet。