MOSFET N-CH 650V 28A D2PAK STB34N65M5
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Description:
MOSFET N-CH 650V 28A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB34N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5325,Price reference "real-time change" China/Hongkong。 STB34N65M5 package/specs, Download STB34N65M5、Datasheet。