SICFET N-CH 650V 45A H2PAK-7 SCTH35N65G2V-7AG
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Description:
SICFET N-CH 650V 45A H2PAK-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SCTH35N65G2V-7AG(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83561,Price reference "real-time change" China/Hongkong。 SCTH35N65G2V-7AG package/specs, Download SCTH35N65G2V-7AG、Datasheet。