MOSFET N CH 650V 9A D2PAK STB11N65M5
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Description:
MOSFET N CH 650V 9A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB11N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53713,Price reference "real-time change" China/Hongkong。 STB11N65M5 package/specs, Download STB11N65M5、Datasheet。