MOSFET N-CH 600V 7.5A IPAK STU10N60M2
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Description:
MOSFET N-CH 600V 7.5A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU10N60M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8562,Price reference "real-time change" China/Hongkong。 STU10N60M2 package/specs, Download STU10N60M2、Datasheet。