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    Home/    Category/    MOSFET/    STH320N4F6-6

    MOSFET N-CH 40V 200A H2PAK-6 STH320N4F6-6

    STH320N4F6-6 image
    The pictures are for reference only
    Brand:
    ST
    Model:
    STH320N4F6-6
    Description:
    MOSFET N-CH 40V 200A H2PAK-6
    Stock:
    50220
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.6
    The market price fluctuates. Please consult the customer service for the actual price
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    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    200A(Tc)
  • Drain source voltage (Vdss)
    40 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    240 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    13800 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    1.3 mΩ @ 80A,10V
  • Power dissipation (maximum)
    300W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 250µA
  • packing
    TR,CT
  • series
    Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    H2PAK-6
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    STH320N4F6-6（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50220,Price reference "real-time change" China/Hongkong。 STH320N4F6-6 package/specs, Download STH320N4F6-6、Datasheet。
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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