PTD HIGH VOLTAGE STWA35N65DM2
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Description:
PTD HIGH VOLTAGE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STWA35N65DM2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78781,Price reference "real-time change" China/Hongkong。 STWA35N65DM2 package/specs, Download STWA35N65DM2、Datasheet。