MOSFET N-CH 600V 36A D2PAK STB46N60M6
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Description:
MOSFET N-CH 600V 36A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB46N60M6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66779,Price reference "real-time change" China/Hongkong。 STB46N60M6 package/specs, Download STB46N60M6、Datasheet。