MOSFET N-CH 650V 12A D2PAK STB14NM65N
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Description:
MOSFET N-CH 650V 12A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB14NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20524,Price reference "real-time change" China/Hongkong。 STB14NM65N package/specs, Download STB14NM65N、Datasheet。