MOSFET N-CH 650V 8A TO220AB STP8NM60
The pictures are for reference only
Description:
MOSFET N-CH 650V 8A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP8NM60(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35596,Price reference "real-time change" China/Hongkong。 STP8NM60 package/specs, Download STP8NM60、Datasheet。