MOSFET N-CH 800V 4A TO220AB STP4NB80
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Description:
MOSFET N-CH 800V 4A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP4NB80(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25538,Price reference "real-time change" China/Hongkong。 STP4NB80 package/specs, Download STP4NB80、Datasheet。