MOSFET N-CH 600V 2A DPAK STD1HNC60T4
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Description:
MOSFET N-CH 600V 2A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD1HNC60T4(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40353,Price reference "real-time change" China/Hongkong。 STD1HNC60T4 package/specs, Download STD1HNC60T4、Datasheet。