MOSFET N-CH 200V 18A TO220FP IRF640FP
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Description:
MOSFET N-CH 200V 18A TO220FP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF640FP(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54035,Price reference "real-time change" China/Hongkong。 IRF640FP package/specs, Download IRF640FP、Datasheet。