MOSFET N-CH 250V 16A D2PAK STB16NS25T4
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Description:
MOSFET N-CH 250V 16A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB16NS25T4(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30307,Price reference "real-time change" China/Hongkong。 STB16NS25T4 package/specs, Download STB16NS25T4、Datasheet。