MOSFET N-CH 100V 50A D2PAK STB50NE10T4
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Description:
MOSFET N-CH 100V 50A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB50NE10T4(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96474,Price reference "real-time change" China/Hongkong。 STB50NE10T4 package/specs, Download STB50NE10T4、Datasheet。