MOSFET N-CH 600V 10A DPAK STD11NM60N
The pictures are for reference only
Description:
MOSFET N-CH 600V 10A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD11NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44961,Price reference "real-time change" China/Hongkong。 STD11NM60N package/specs, Download STD11NM60N、Datasheet。