MOSFET N-CH 40V 120A I2PAK STB200NF04L-1
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Description:
MOSFET N-CH 40V 120A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB200NF04L-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48212,Price reference "real-time change" China/Hongkong。 STB200NF04L-1 package/specs, Download STB200NF04L-1、Datasheet。