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MOSFET N-CH 30V 80A IPAK STD90N03L-1

STD90N03L-1 image
The pictures are for reference only
Brand:
Model:
STD90N03L-1
Description:
MOSFET N-CH 30V 80A IPAK
Stock:
53643
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    80A(Tc)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    32 nC @ 5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2805 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    5.7 mΩ @ 40A,10V
  • Power dissipation (maximum)
    95W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    1V @ 250µA
  • packing
    pipe
  • series
    STripFET™ III
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    I-PAK
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
  • PDFicoDataSheet
    STD90N03L-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53643,Price reference "real-time change" China/Hongkong。 STD90N03L-1 package/specs, Download STD90N03L-1、Datasheet。
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